Photoluminescence from trapped excitons in Si1-xGex/Si quantum well structures

被引:0
|
作者
Fudan Univ, Shanghai, China [1 ]
机构
来源
J Phys Condens Matter | / 21卷 / 3947-3954期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
12
引用
收藏
相关论文
共 50 条
  • [1] Photoluminescence from trapped excitons in Si1-xGex/Si quantum well structures
    Liu, XH
    Huang, DM
    Jiang, ZM
    Lu, XK
    Zhang, XJ
    Wang, X
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (21) : 3947 - 3954
  • [2] PHOTOLUMINESCENCE OF SI1-XGEX/SI QUANTUM-WELL STRUCTURES
    TERASHIMA, K
    TAJIMA, M
    IKARASHI, N
    NIINO, T
    TATSUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3601 - 3605
  • [3] INTENSE PHOTOLUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES
    FUKATSU, S
    USAMI, N
    YOSHIDA, H
    FUJIWARA, A
    TAKAHASHI, Y
    SHIRAKI, Y
    ITO, R
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 489 - 493
  • [4] HIGH QUANTUM EFFICIENCY PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI1-XGEX
    LENCHYSHYN, LC
    THEWALT, MLW
    STURM, JC
    SCHWARTZ, PV
    PRINZ, EJ
    ROWELL, NL
    NOEL, JP
    HOUGHTON, DC
    APPLIED PHYSICS LETTERS, 1992, 60 (25) : 3174 - 3176
  • [5] Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures
    Huda, MQ
    Peaker, AR
    Evans-Freeman, JH
    Houghton, DC
    Gillin, WP
    ELECTRONICS LETTERS, 1997, 33 (13) : 1182 - 1183
  • [6] PHOTOLUMINESCENCE SPECTROSCOPY OF LOCALIZED EXCITONS IN SI1-XGEX
    LENCHYSHYN, LC
    THEWALT, MLW
    STURM, JC
    SCHWARTZ, PV
    ROWELL, NL
    NOEL, JP
    HOUGHTON, DC
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (02) : 233 - 238
  • [7] PHOTOLUMINESCENCE SPECTRA OF SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY 3 DIFFERENT TECHNIQUES
    TERASHIMA, K
    TAJIMA, M
    IKARASHI, N
    NIINO, T
    HIROI, M
    TATSUMI, T
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (12) : 1081 - 1085
  • [8] Optical detection of interdiffusion in strained Si1-xGex/Si quantum well structures
    Sunamura, Hiroshi
    Fukatsu, Susumu
    Usami, Noritaka
    Shiraki, Yasuhiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2344 - 2347
  • [9] Photoluminescence Properties of Si1-xGex/Si Strained Layer Structures
    PENG Yingcai(Hebei University
    Semiconductor Photonics and Technology, 1996, (03) : 168 - 174
  • [10] Photoluminescence study of Si1-xGex/Si surface quantum wells
    Kishimoto, Y
    Shiraki, Y
    Fukatsu, S
    APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2837 - 2839