CHARACTERIZATION OF A TWO-LAYER RESIST.

被引：0
|
作者：
Vazsonyi, E.B. [1 ]
Vertesy, Z. [1 ]
Holly, S. [1 ]
机构：
[1] Hungarian Acad of Sciences, Central, Research Inst for Physics, Budapest,, Hung, Hungarian Acad of Sciences, Central Research Inst for Physics, Budapest, Hung
来源：
Microelectronic Engineering | 1985年 / 3卷 / 1-4期
关键词：
INTEGRATED CIRCUIT MANUFACTURE - LITHOGRAPHY - SPECTROSCOPY; INFRARED - ULTRAVIOLET RADIATION;
D O I：
10.1016/0167-9317(85)90066-8
中图分类号：
学科分类号：
摘要：
The performance of a novel two-layer-technique, consisting of two positive photoresist layers, is discussed. High energy flood exposure with near UV radiation, followed by a high temperature bake of the bottom AZ1450J resist layer protects the surface of this layer against erosion when the top layer AZ1450B or AZ1470 resist is spun on it. The one-step-development of both layers has also become possible.
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页码：525 / 532
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