共 50 条
- [42] Local epitaxy and lateral epitaxial overgrowth of SiC [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 112 - 120
- [43] Interface supersaturation in epitaxial lateral overgrowth of InP [J]. PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 161 - 165
- [44] Improvements in epitaxial lateral overgrowth of InP by MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 2014, 402 : 234 - 242
- [45] Epitaxial lateral overgrowth of GaN on Si (111) [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 182 - 185
- [46] InAs epitaxial lateral overgrowth of W masks [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 280 (1-2) : 81 - 86
- [47] Epitaxial lateral overgrowth of GaN by HVPE and MOVPE [J]. APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 214 - 220
- [48] Maskless lateral epitaxial overgrowth of GaN on sapphire [J]. WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 315 - 320
- [49] GaN epitaxial lateral overgrowth and optical characterization [J]. APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1179 - 1181
- [50] Epitaxial lateral overgrowth of GaN on silicon (111) [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 733 - 737