Thermoelectric properties of silicon-germanium type i clathrates

被引：0
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作者：
Martin, J. [1 ]
Nolas, G.S. [1 ]
Wang, H. [2 ]
Yang, J. [3 ]
机构：
[1] Department of Physics, University of South Florida, Tampa, FL 33620, United States
[2] Oak Ridge National Laboratory, Oak Ridge, TN 37831-6064, United States
[3] Materials and Processes Laboratory, General Motors R and D Center, Warren, MI 48090, United States
来源：
Journal of Applied Physics | 2007年 / 102卷 / 10期
关键词：
We report the synthesis and chemical; structural; and transport properties characterization of Ba8 Ga16 Six Ge30-x type I clathrates with similar Ga-to-group IV element ratios but with increasing Si substitution (4<x<14). Substitution of 20 at. % Si within the Ga-Ge lattice framework of the type I clathrate Ba8 Ga16 Ge30 results in thermoelectric performance enhancement. The unique dependences of carrier concentration; electrical resistivity; Seebeck coefficient; and carrier effective mass on Si substitution level; and the lack of variation in the Ga-to-group IV element ratios may imply a modified band structure with Si substitution. These results indicate an additional method for tuning the electronic properties of Ba8 Ga16 Ge30 for thermoelectric applications. © 2007 American Institute of Physics;
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