Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells

被引：0
|
作者：
van Lange, Victor T. [1 ]
Peeters, Wouter H. J. [1 ]
Verheijen, Marcel A. [1 ]
van Hemert, Max C. [1 ]
Bakkers, Erik P. A. M. [1 ]
Haverkort, Jos E. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Appl Phys & Sci Educ, Eindhoven, Netherlands
来源：
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS | 2024年
关键词：
Silicon photonics; quantum well; quantum confinement; hexagonal silicon-germanium;
D O I：
10.1109/SiPhotonics60897.2024.10543877
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.
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页数：2
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