Class de Switch-Mode Power Amplifier Using GaN Power HEMTs

被引：0
|
作者：
Tong, Zikang [1 ]
Ye, Zhechi [1 ]
Rivas-Davila, Juan [1 ]
机构：
[1] Stanford University, Stanford,CA, United States
来源：
IEEE Microwave Magazine | 2022年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
17
引用
收藏
页码：72 / 79
相关论文
共 50 条
  • [1] Class DE Switch-Mode Power Amplifier Using GaN Power HEMTs
    Tong, Zikang
    Ye, Zhechi
    Rivas-Davila, Juan
    [J]. IEEE MICROWAVE MAGAZINE, 2022, 23 (03) : 72 - 79
  • [2] Switch-mode power amplifier linearization
    Kelly, David E.
    Mekechuk, Kelly
    Miller, Thad
    [J]. 2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 135 - 138
  • [3] A high power switch-mode power audio amplifier
    Iversen, Niels E.
    Bjornsson, Johann S.
    Bostrom, Patrik
    Petersen, Lars P.
    [J]. 146TH AES CONVENTION, 2019,
  • [4] SWITCH-MODE POWER AMPLIFIER DESIGN METHOD
    Bozanic, Mladen
    Sinha, Saurabh
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2011, 53 (12) : 2724 - 2728
  • [5] Advanced Switch-Mode Concepts using GaN: The Class-S Amplifier
    Heinrich, Wolfgang
    Wentzel, Andreas
    Meliani, Chafik
    [J]. 18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2, 2010,
  • [6] High Accuracy Angelov Model for GaN HEMTs with Trapping Effects for Switch-Mode Power Amplifiers
    Shelton, C.
    Eroglu, A.
    [J]. 2022 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE, RFM, 2022,
  • [7] Switch-mode audio power amplifier performance measurements
    Hofer, B
    Cornwell, J
    [J]. ELECTRONICS WORLD, 2005, 111 (1833): : 30 - 32
  • [8] ANALYSIS OF BROADBAND GAN SWITCH MODE CLASS-E POWER AMPLIFIER
    Tanany, Ahmed
    Sayed, Ahmed
    Boeck, Georg
    [J]. PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS, 2013, 38 : 151 - 160
  • [9] Broadband GaN Switch Mode Class E Power Amplifier for UHF Applications
    Al Tanany, Ahmed
    Sayed, Ahmed
    Boeck, Georg
    [J]. 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 761 - 764
  • [10] Switch-Mode Amplifier ICs with over 90% Efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs
    Meliani, C.
    Flucke, J.
    Wentzel, A.
    Wuerfl, J.
    Heinrich, W.
    Traenkle, G.
    [J]. 2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 1013 - 1016
12345