Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots

被引：0

作者：

Kim, J.H. ^{[1
]}

Woo, J.T. ^{[1
]}

Kim, T.W. ^{[1
]}

Yoo, K.H. ^{[2
]}

Lee, Y.T. ^{[3
]}

机构：

[1] Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea, Republic of

[2] Department of Physics, Research Institute of Basic Sciences, Kyung Hee University, Seoul 137-701, Korea, Republic of

[3] Department of Information and Communications, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea, Republic of

来源：

Journal of Applied Physics | 2006年 / 100卷 / 06期

关键词：

The microstructural properties and the shape of an InAs/GaAs array grown by molecular beam epitaxy were studied using transmission electron microscopy (TEM) measurements; and the interband transitions were investigated by using temperature-dependent photoluminescence (PL) measurements. The shape of the InAs quantum dots (QDs) on the basis of the cross-sectional bright-field TEM image was modeled to be a convex-plane lens. The electronic subband energies and the wave functions were numerically calculated by using a three-dimensional finite-difference method; taking into account strain effects. The excitonic peaks corresponding to interband transitions from the ground electronic subband to the ground heavy-hole band (E1-KH1) in the multiple-stacked QDs; as determined from the PL spectra; were in reasonable agreement with the (E1-HH1) interband transition energies obtained from the results of the numerical calculations. © 2006 American Institute of Physics;

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Journal article (JA)

引用

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