Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

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[1] Um, Jae Gwang
[2] Mativenga, Mallory
[3] 1,Migliorato, Piero
[4] Jang, Jin
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Jang, J. (jjang@khu.ac.kr) | 1600年 / American Institute of Physics Inc.卷 / 115期
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