Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes

被引:0
|
作者
Kim, Keunjoo [1 ]
Choi, Jaeho [1 ]
Bae, Tae Sung [2 ]
Jung, Mi [3 ]
Woo, Deok Ha [3 ]
机构
[1] Department of Mechanical Engineering, Research Center for Industrial Technology, Chonbuk National University, Jeonju 561-756, Korea, Republic of
[2] Jeonju Center, Korea Basic Science Institute, Jeonju 561-756, Korea, Republic of
[3] Photonic Research Center, Korea Institute of Science and Technology, Seoul 110-756, Korea, Republic of
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
页码:6682 / 6684
相关论文
共 50 条
  • [31] InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes
    Yu, Chun-Ta
    Lai, Wei-Chih
    Yen, Cheng-Hsiung
    Chang, Shoou-Jinn
    OPTICAL MATERIALS EXPRESS, 2013, 3 (11): : 1952 - 1959
  • [32] GaN-based MQW light emitting diodes
    Kato, H
    Koide, N
    Hirano, A
    Koike, M
    Amano, H
    Akasaki, I
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 31 - 35
  • [33] Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
    Chung, Hun Jae
    Choi, Rak Jun
    Kim, Min Ho
    Han, Jae Woong
    Park, Young Min
    Kim, Yu Seung
    Paek, Ho Sun
    Sone, Cheol Soo
    Park, Yong Jo
    Kim, Jong Kyu
    Schubert, E. Fred
    APPLIED PHYSICS LETTERS, 2009, 95 (24)
  • [34] Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers
    Kim, Hyunsoo
    Cho, Jaehee
    Lee, Jeong Wook
    Yoon, Sukho
    Kim, Hyungkun
    Sone, Cheolsoo
    Park, Yongjo
    Seong, Tae-Yeon
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
  • [35] Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface
    Zhuo, Xiang-Jing
    Zhang, Jun
    Li, Dan-Wei
    Ren, Zhi-Wei
    Yi, Han-Xiang
    Wang, Xing-Fu
    Tong, Jin-Hui
    Chen, Xin
    Zhao, Bi-Jun
    Wang, Wei-Li
    Li, Shu-Ti
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (10) : 4200 - 4205
  • [36] Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface
    Xiang-Jing Zhuo
    Jun Zhang
    Dan-Wei Li
    Zhi-Wei Ren
    Han-Xiang Yi
    Xing-Fu Wang
    Jin-Hui Tong
    Xin Chen
    Bi-Jun Zhao
    Wei-Li Wang
    Shu-Ti Li
    Journal of Materials Science: Materials in Electronics, 2014, 25 : 4200 - 4205
  • [37] Enhanced electroluminescent cooling in GaN-based light-emitting diodes
    Piprek, Joachim
    Li, Zhan-Ming
    SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XIX, 2017, 10107
  • [38] Radiative recombination process in InGaN active layers of GaN-based light emitting diodes
    Zheng, RS
    Taguchi, T
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6260 - 6264
  • [39] Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN
    Lee, Kwang Jae
    Oh, Semi
    Kim, Sang-Jo
    Yim, Sang-Youp
    Myoung, NoSoung
    Lee, Kwanjae
    Kim, Jin Soo
    Jung, Sung Hoon
    Chung, Tae-Hoon
    Park, Seong-Ju
    NANOTECHNOLOGY, 2019, 30 (41)
  • [40] Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
    Han, Dong-Pyo
    Oh, Chan-Hyoung
    Kim, Hyunsung
    Shim, Jong-In
    Kim, Kyu-Sang
    Shin, Dong-Soo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) : 587 - 592