Enhanced light extraction from nanoporous surfaces of InGaN/GaN-based light emitting diodes

被引：0
|
作者：
Kim, Keunjoo [1 ]
Choi, Jaeho [1 ]
Bae, Tae Sung [2 ]
Jung, Mi [3 ]
Woo, Deok Ha [3 ]
机构：
[1] Department of Mechanical Engineering, Research Center for Industrial Technology, Chonbuk National University, Jeonju 561-756, Korea, Republic of
[2] Jeonju Center, Korea Basic Science Institute, Jeonju 561-756, Korea, Republic of
[3] Photonic Research Center, Korea Institute of Science and Technology, Seoul 110-756, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 10 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：6682 / 6684
相关论文
共 50 条
  • [1] Enhanced light extraction from nanoporous surfaces of InGaN/GaN-Based light emitting diodes
    Kim, Keunjoo
    Choi, Jacho
    Bae, Tae Sung
    Jung, Mi
    Woo, Deok Ha
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6682 - 6684
  • [2] Enhanced light extraction from triangular GaN-Based light-emitting diodes
    Kim, Ja-Yeon
    Kwon, Min-Ki
    Kim, Jae-Pil
    Park, Seong-Ju
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (21-24) : 1865 - 1867
  • [3] Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface
    Gong, H.
    Hao, X.
    Xia, W.
    Wu, Y.
    Xu, X.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2010, 50 (01):
  • [4] Design of GaN-Based Light-Emitting Diodes with Enhanced Lateral Light Extraction
    Kim, Hyunsoo
    Kim, Seongjun
    Park, Youngjun
    PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 61 - 62
  • [5] Enhanced Light Extraction of GaN-Based Light Emitting Diodes Using Nanorod Arrays
    Lin, Chih-Chien
    Lee, Ching-Ting
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (08) : H278 - H280
  • [6] Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
    Cai Jin-Xin
    Sun Hui-Qing
    Zheng Huan
    Zhang Pan-Jun
    Guo Zhi-You
    CHINESE PHYSICS B, 2014, 23 (05)
  • [7] Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers
    蔡金鑫
    孙慧卿
    郑欢
    张盼君
    郭志友
    Chinese Physics B, 2014, 23 (05) : 634 - 637
  • [8] Midinfrared emission from InGaN/GaN-based light-emitting diodes
    Hofstetter, D
    Faist, J
    Bour, DP
    APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1495 - 1497
  • [9] Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods
    Lee, Hee Kwan
    Kim, Myung Sub
    Yu, Jae Su
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (04) : 285 - 287
  • [10] Enhanced Light Extraction Efficiency of GaN-Based Hybrid Nanorods Light-Emitting Diodes
    Huang, Jhih-Kai
    Liu, Che-Yu
    Chen, Tzi-Pei
    Huang, Hung-Wen
    Lai, Fang-I
    Lee, Po-Tsung
    Lin, Chung-Hsiang
    Chang, Chun-Yen
    Kao, Tsung Sheng
    Kuo, Hao-Chung
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (04) : 354 - 360
12345