Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method

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作者：
机构：
[1] Logunov, M.V.
[2] Neverov, V.A.
[3] Mamin, B.F.
来源：
| 1600年 / Federal Informational-Analytical Center of the Defense Industry卷
关键词：
Low angle X-ray scattering - Silicon carbide crystals - Small angle scattering - Small angle X ray scattering methods - Structural heterogeneity - Structural inhomogeneities - Volumetric fractals;
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摘要：
The nanostructure of silicon carbide crystals was investigated by small-angle X-ray scattering method. The presence of structural inhomogeneity's in the form of point defects, linear and volumetric fractals, fractal interfaces absence of scattering formations and units was showed.
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