Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple-gate single-electron transistor

被引：0
|
作者：
Kawata, Yoshiyuki [1 ]
Khalafalla, Mohammed A.H. [1 ]
Usami, Kouichi [1 ]
Tsuchiya, Yoshishige [1 ]
Mizuta, Hiroshi [1 ]
Oda, Shunri [1 ]
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 7 A期
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Journal article (JA)
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页码：4386 / 4389
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