Analysis of ESD protection for high power GaN-based light-emitting diodes

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作者：
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [1 ]
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来源：
Bandaoti Guangdian/Semiconductor Optoelectronics | 2007年 / 28卷 / 04期
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摘要：
GaN-based light-emitting diodes are sensitive to electrostatic discharge (ESD). Several methods of ESD protection are introduced and the mechanism of ESD damage is analyzed. With this understanding, it summarizes the effective and simple methods of ESD protection for high power GaN-based light-emitting diodes.
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页码：474 / 477
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