Kinetics of solid-state reactive diffusion between Sn-Ni alloys and Pd

被引：0

作者：

Tanaka, S. ^{[1
]}

Kajihara, M. ^{[2
]}

机构：

[1] Graduate School, Tokyo Institute of Technology, Yokohama, Kanagawa, 226-8502, Japan

[2] Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama Kanagawa, 226-8502, Japan

来源：

Journal of Alloys and Compounds | 2009年 / 484卷 / 1-2期

关键词：

The kinetics of the solid-state reactive diffusion in the (Sn-Ni)/Pd system was experimentally studied to examine the influence of Ni on the growth behavior of compounds at the interconnection between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during energization heating. Diffusion couples composed of pure Pd and binary Sn-Ni alloys with y = 0.01; 0.03 and 0.05 were prepared by a diffusion bonding technique; and then isothermally annealed at temperatures of T = 453 K and 473 K for various times up to 325 h. Here; y is the mol fraction of Ni in the Sn-Ni alloy. Owing to annealing; compound layers of (Pd; Ni)Sn4; PdSn4; PdSn3 and PdSn2 are formed at the (Sn-Ni)/Pd interface in the diffusion couple. The thickness is much smaller for the (Pd; PdSn3 and PdSn2 layers than for the PdSn4 layer. Therefore; the growth of the compound layers is governed by PdSn4. The square of the total thickness l of the compound layers is almost proportional to the annealing time t as follows: l2 = Kt; where K is the parabolic coefficient. This relationship is called the parabolic relationship. Since grain growth occurs at certain rates in the PdSn4 layer; the parabolic relationship guarantees that the growth of the compound layers is controlled by volume diffusion. At T = 473 K; K is insensitive to y. On the other hand; at T = 453 K; K remarkably decreases with increasing value of y; and reaches to the minimum at y = 0.03. Such dependencies of K on y and T are attributed to the formation of (Pd; Hence; the addition of Ni with y = 0.03 into the Sn-base solder considerably suppresses the growth of compounds at the interconnection between the Sn-base solder and the multilayer Pd/Ni/Cu conductor during solid-state energization heating unless the heating temperature exceeds 453 K. © 2009 Elsevier B.V. All rights reserved;

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页码：273 / 279

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