Retention mechanism of localized silicon-oxide-nitride-oxide-silicon embedded NOR device

被引：0

作者：

Hyun, JaeWoong ^{[1
]}

Jeong, YounSeok ^{[1
]}

Chae, HeeSoon ^{[1
]}

Seo, Sunae ^{[1
]}

Kim, JinHee ^{[2
]}

Um, MyungYoon ^{[2
]}

Lee, ByoungJin ^{[2
]}

Kim, KiChul ^{[2
]}

Cho, InWook ^{[2
]}

Bae, GeumJong ^{[2
]}

Lee, NaeIn ^{[2
]}

Kim, ChungWoo ^{[1
]}

机构：

[1] Semiconductor Device and Material Laboratory, Samsung Advanced Institute of Technology (SAIT), Mt 14-1, Nongseo-ri, Yongin, Kyungki-do 449-712, Korea, Republic of

[2] System LSI Division, Semiconductor Business, Samsung Electronics Co., Ltd., Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 37-41期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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