Anisotropie optical matrix elements in strained GaN quantum wells on semipolar and nonpolar substrates

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作者：
Yamaguchi, A. Atsushi [1 ]
机构：
[1] Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology, Tokyo 105-0002, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 33-35期
关键词：
In-plane optical anisotropies in compressively strained III-nitride quantum wells on semipolar and nonpolar substrates are numerically calculated using the 6 × 6 k &middot p Hamiltonian. It is shown that quantum confinement and compressive strain have the opposite effects on the anisotropies; and that the in-plane polarization degree is determined by the competition of these two effects. These characteristics are also verified by analytical calculation; and it is found that the signs of (A4 - A5) and (D4 - D5) are essential factors in determining the above-mentioned polarization properties; where A4 and A5 are valence band parameters and D4 and D5 are deformation potentials. On the basis of the calculation results; the structural design of laser diodes on semipolar and nonpolar substrates is also discussed. © 2007 The Japan Society of Applied Physics;
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