Hydrogen modulation-doped structures to improve crystalline fraction of polycrystalline silicon films prepared by excimer laser annealing at low energy densities

被引：0

作者：

Heya, Akira ^{[1
]}

Matsuo, Naoto ^{[1
]}

Serikawa, Tadashi ^{[2
]}

Kawamoto, Naoya ^{[3
]}

机构：

[1] University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan

[2] Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

[3] Yamaguchi University, Tokiwadai, Ube, Yamaguchi 755-8611, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 12期

关键词：

An excimer laser annealing (ELA) of amorphous silicon (a-Si) with a hydrogen modulation-doped layer (ELHMD) was investigated using a-Si films with various H concentrations and H distributions for forming high-quality polycrystalline silicon (poly-Si) films at a low energy irradiation (100mJ/cm2). Poly-Si films with a high crystalline fraction of 80% are obtained by controlling the H concentration distribution and shot number for ELA. In addition; the film exfoliation caused by a H2 burst can be suppressed; and secondary grain growth can be induced using HMD a-Si films. It is considered that the nucleation is enhanced by the recombination energy of the H atoms around the SI-H2 bond during Si melting and that H desorption affects grain growth and film exfoliation. © 2007 The Japan Society of Applied Physics;

D O I：

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学科分类号：

摘要：

Journal article (JA)

引用

页码：7858 / 7860

共 5 条

[1] Hydrogen modulation-doped structures to improve crystalline fraction of polycrystalline silicon films prepared by excimer laser annealing at low energy densities
Heya, Akira
Matsuo, Naoto
Serikawa, Tadashi
Kawamoto, Naoya
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7858 - 7860
[2] Behavior of hydrogen in excimer laser annealing of hydrogen-modulation-doped amorphous silicon layer
Heya, Akira
Serikawa, Tadashi
Kawamoto, Naoya
Matsuo, Naoto
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) : 1853 - 1857
[3] Effect of hydrogen on secondary grain growth of polycrystalline silicon films by excimer laser annealing in low-temperature process
Heya, Akira
Matsuo, Naoto
Matsumura, Hideki
Kawamoto, Naoya
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6908 - 6910
[4] Effect of hydrogen on secondary grain growth of polycrystalline silicon films by excimer laser annealing in low-temperature process
Heya, Akira
Matsuo, Naoto
Matsumura, Hideki
Kawamoto, Naoya
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6908 - 6910
[5] Crystallization by excimer laser annealing for a-Si:H films with low hydrogen content prepared by Cat-CVD
Yogoro, Y
Masuda, A
Matsumura, H
THIN SOLID FILMS, 2003, 430 (1-2) : 296 - 299

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