An STM observation of CuPc on the SiC(0001) - (3 × 3) surfaces

被引:0
|
作者
Tanaka, Keisuke [1 ]
Ikari, Tomonori [2 ]
Naitoh, Masamichi [1 ]
Nishigaki, Satoshi [1 ]
Shoji, Fumiya [3 ]
机构
[1] Department of Electrical Engineering, Kyushu Institute of Technology, 1-1, Sensui, Tobata, Kitakyushu 804-8550, Japan
[2] Ube National College of Technology, 2-14-1, Tokiwadai, Ube, Yamaguchi 755-8555, Japan
[3] Kyushu Kyoritsu University, 1-8, Jiyugaoka, Yahatanishi, Kitakyushu 807-8585, Japan
关键词
8;
D O I
10.3131/jvsj2.51.124
中图分类号
学科分类号
摘要
引用
收藏
页码:124 / 127
相关论文
共 50 条
  • [41] Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces
    Li, Yuan
    Chen, Xuejiang
    Ai, Wensen
    COMPUTATIONAL MATERIALS SCIENCE, 2021, 197
  • [42] XAFS studies of the formation of cobalt silicide on (√3 x √3) SiC(0001)
    Platow, W
    Wood, DE
    Burnette, JE
    Nemanich, RJ
    Sayers, DE
    JOURNAL OF SYNCHROTRON RADIATION, 2001, 8 (02) : 475 - 477
  • [43] New carbon rich model of the α-SiC(0001)√3×√3 surface reconstruction
    Badziag, Piotr
    Surface Science, 1998, 412-413 (03): : 502 - 508
  • [44] Photoemission study on the 6H-SiC(0001) 3 × 3 surface
    Ihm, Kyuwook
    Cho, Eun-Sang
    Hwang, Chan-Cuk
    Kang, Tai-Hee
    Jeon, Cheol-Ho
    Kim, Ki-Jeong
    Kim, Bongsoo
    Park, Chong-Yun
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (5 A): : 2605 - 2608
  • [45] Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
    Henry, Anne
    Leone, Stefano
    Beyer, Franziska C.
    Andersson, Sven
    Kordina, Olof
    Janzen, Erik
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 75 - 78
  • [46] Study of 3C-SiC nucleation on (0001) 6H-SiC nominal surfaces by the CF-PVT method
    Latu-Romain, L.
    Chaussende, D.
    Chaudouet, P.
    Robaut, F.
    Berthome, G.
    Pons, M.
    Madar, R.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E609 - E613
  • [47] An STM observation of adsorption of CuPc on the Si(100) surface with bi-line structures
    Nakamura, S.
    Kashirajima, S.
    Johdai, Y.
    Yoshiiwa, Y.
    Naitoh, M.
    Nishigaki, S.
    Shimizu, Y.
    Ikari, T.
    Shoji, F.
    SURFACE REVIEW AND LETTERS, 2007, 14 (05) : 957 - 961
  • [48] STM imagery and density functional calculations of C60 fullerene adsorption on the 6H-SiC(0001)-3x3 surface
    Ovramenko, T.
    Spillebout, F.
    Bocquet, F. C.
    Mayne, A. J.
    Dujardin, G.
    Sonnet, Ph.
    Stauffer, L.
    Ksari, Y.
    Themlin, J. -M.
    PHYSICAL REVIEW B, 2013, 87 (15)
  • [49] OBSERVATION OF SURFACES BY SCANNING TUNNELING MICROSCOPE (STM)
    ONO, M
    JOURNAL OF JAPAN SOCIETY OF LUBRICATION ENGINEERS, 1988, 33 (08): : 603 - 607
  • [50] STM OBSERVATION OF FINE-STRUCTURES OF SURFACES
    ONO, M
    OKAYAMA, S
    TOKUMOTO, H
    KAJIMURA, K
    JOURNAL OF ELECTRON MICROSCOPY, 1987, 36 (05): : 327 - 327