Experimental observation of ballistic to diffusive transition in phonon thermal transport of AlN thin films

被引：0

作者：

Hoque, Md Shafkat Bin ^{[1
]}

Koh, Yee Rui ^{[1
]}

Zare, Saman ^{[1
]}

Liao, Michael E. ^{[2
]}

Huynh, Kenny ^{[2
]}

Goorsky, Mark S. ^{[2
]}

Liu, Zeyu ^{[3
]}

Shi, Jingjing ^{[4
]}

Graham, Samuel ^{[4
,5
]}

Luo, Tengfei ^{[6
]}

Ahmad, Habib ^{[7
]}

Doolittle, W. Alan ^{[7
]}

Hopkins, Patrick E. ^{[1
,8
,9
]}

机构：

[1] Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville,VA,22904, United States

[2] Department of Materials Science and Engineering, University of California, Los Angeles,CA,90095, United States

[3] Department of Applied Physics, Hunan University, Changsha,410300, China

[4] George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta,GA,30332, United States

[5] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta,GA,30332, United States

[6] Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame,IN,46556, United States

[7] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,GA,30332, United States

[8] Department of Materials Science and Engineering, University of Virginia, Charlottesville,VA,22904, United States

[9] Department of Physics, University of Virginia, Charlottesville,VA,22904, United States

来源：

Applied Physics Letters | 2024年 / 125卷 / 26期

关键词：

Carrier concentration - Conductive films - Film thickness - Gallium alloys - II-VI semiconductors - III-V semiconductors - Layered semiconductors - Metallic films - Nanocrystals - Narrow band gap semiconductors - Phonon scattering - Phonons - Semiconducting films - Semiconducting gallium compounds - Semiconducting indium phosphide - Semiconductor alloys - Thin films - Wide band gap semiconductors;

D O I：

10.1063/5.0239769

中图分类号：

学科分类号：

摘要：

Ultrawide bandgap semiconductor aluminum nitride (AlN) possesses high thermal conductivity in bulk form due to long phonon mean-free-paths, high group velocity, and long lifetimes. However, the thermal transport scenario becomes very different in a thin AlN film due to phonon-defect and phonon-boundary scattering. Herein, we report experimental observation of ballistic to diffusive transition in a series of AlN thin films (1.6-2440 nm) grown on sapphire substrates. The ballistic transport is characterized by constant thermal resistance as a function of film thickness due to phonon scattering by defects and boundaries. In this transport regime, phonons possess very small group velocities and lifetimes. A gradual increase in the optical phonon lifetime is observed in the diffusive regime. Our study will aid the incorporation of highly conductive thin film materials in the semiconductor production line for efficient thermal management. © 2024 Author(s).

引用

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