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- [41] Halogenated Tetraazapentacenes with Electron Mobility as High as 27.8 cm2 V-1 s-1 in Solution-Processed n-Channel Organic Thin-Film TransistorsADVANCED MATERIALS, 2018, 30 (38)Chu, Ming论文数: 0 引用数: 0 h-index: 0机构: Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaFan, Jian-Xun论文数: 0 引用数: 0 h-index: 0机构: Jilin Univ, Inst Theoret Chem, Lab Theoret & Computat Chem, Changchun 130023, Jilin, Peoples R China Weinan Normal Univ, Coll Chem & Life Sci, Weinan 714000, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaYang, Shuaijun论文数: 0 引用数: 0 h-index: 0机构: Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaLiu, Dan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaNg, Chun Fai论文数: 0 引用数: 0 h-index: 0机构: Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaDong, Huanli论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaRen, Ai-Min论文数: 0 引用数: 0 h-index: 0机构: Jilin Univ, Inst Theoret Chem, Lab Theoret & Computat Chem, Changchun 130023, Jilin, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R ChinaMiao, Qian论文数: 0 引用数: 0 h-index: 0机构: Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China
- [42] High-Mobility Organic Thin-Film Transistors Over 10 cm2 V-1 s-1 Fabricated Using Bis(benzothieno) naphthalene Polycrystalline FilmsJAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)Kurihara, Naoki论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanYao, Atsushi论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanSunagawa, Misa论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanIkeda, Yoichi论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanTerai, Kota论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanKondo, Hirofumi论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanSaito, Masatoshi论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanIkeda, Hidetsugu论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, JapanNakamura, Hiroaki论文数: 0 引用数: 0 h-index: 0机构: Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan Idemitsu Kosan Co Ltd, Adv Technol Res Labs, Chiba 2990293, Japan
- [43] Plasmon-Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V-1 s-1ACS NANO, 2022, 16 (06) : 8812 - 8819Rajapitamahuni, Anil Kumar论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA论文数: 引用数: h-index:机构:Kumar, Avinash论文数: 0 引用数: 0 h-index: 0机构: Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USADatta, Animesh论文数: 0 引用数: 0 h-index: 0机构: Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USARanga, Praneeth论文数: 0 引用数: 0 h-index: 0机构: Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USAThoutam, Laxman Raju论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA SR Univ, Dept Elect & Commun Engn, Warangal Urban 506371, Telangana, India Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USAKrishnamoorthy, Sriram论文数: 0 引用数: 0 h-index: 0机构: Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USASingisetti, Uttam论文数: 0 引用数: 0 h-index: 0机构: Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USAJalan, Bharat论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
- [44] Structure-property relationships and mobility optimization in sputtered La-doped BaSnO3 films: Toward 100 cm2 V-1 s-1 mobilityPHYSICAL REVIEW MATERIALS, 2021, 5 (04):Postiglione, William M.论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAGanguly, Koustav论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAYun, Hwanhui论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA论文数: 引用数: h-index:机构:Jacobson, Andrew论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USABorgeson, Lindsey论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAJalan, Bharat论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USAMkhoyan, K. Andre论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USALeighton, Chris论文数: 0 引用数: 0 h-index: 0机构: Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA Univ Minnesota, Dept Chem Engn & Mat Sci, 421 Washington Ave SE, Minneapolis, MN 55455 USA
- [45] Electron-Deficient Poly(p-phenylene vinylene) Provides Electron Mobility over 1 cm2 V-1 s-1 under Ambient ConditionsJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (33) : 12168 - 12171Lei, Ting论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R China Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R ChinaDou, Jin-Hu论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R China Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R ChinaCao, Xiao-Yu论文数: 0 引用数: 0 h-index: 0机构: Xiamen Univ, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R ChinaWang, Jie-Yu论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R China Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R ChinaPei, Jian论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R China Peking Univ, Coll Chem & Mol Engn, Minist Educ, Beijing Natl Lab Mol Sci,Key Lab Bioorgan Chem &, Beijing 100871, Peoples R China
- [46] Band mobility exceeding 10cm2 V-1 s-1 assessed by field-effect and chemical double doping in semicrystalline polymeric semiconductorsAPPLIED PHYSICS LETTERS, 2021, 119 (01)论文数: 引用数: h-index:机构:Yamashita, Yu论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPIMANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, JapanMori, Taizo论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPIMANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, JapanAriga, Katsuhiko论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPIMANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, JapanTakeya, Jun论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPIMANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan Natl Inst Adv Ind Sci & Technol, AIST Utokyo Adv Operando Measurement Technol Ope, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, JapanWatanabe, Shun论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Natl Inst Adv Ind Sci & Technol, AIST Utokyo Adv Operando Measurement Technol Ope, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Mat Innovat Res Ctr MIRC, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan
- [47] An In-Situ Cyanidation Strategy To Access Tetracyanodiacenaphthoanthracene Diimides with High Electron Mobilities Exceeding 10 cm2 V-1 s-1ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2023, 62 (34)Wu, Zeng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaLiu, Wentao论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Coll Chem, Minist Educ, Key Lab Environmentally Friendly Chem & Applicat, Xiangtan 411105, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaYang, Xin论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Coll Chem, Minist Educ, Key Lab Environmentally Friendly Chem & Applicat, Xiangtan 411105, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaLi, Wenhao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaZhao, Lingli论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Coll Chem, Minist Educ, Key Lab Environmentally Friendly Chem & Applicat, Xiangtan 411105, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaChi, Kai论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaXiao, Xuetao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaYan, Yongkun论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaZeng, Weixuan论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaLiu, Yunqi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaChen, Huajie论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Coll Chem, Minist Educ, Key Lab Environmentally Friendly Chem & Applicat, Xiangtan 411105, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R ChinaZhao, Yan论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China Fudan Univ, Dept Mat Sci, Lab Mol Mat & Devices, Shanghai 200433, Peoples R China
- [48] Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V-1 s-1) and low thermal budget (200 °C)JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (44)Xiao, Na论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Chettri, Dhanu论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi ArabiaMainali, Genesh论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi ArabiaLiu, Zhiyuan论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi ArabiaBen Hassine, Mohamed论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, CoreLabs, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi ArabiaTang, Xiao论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi ArabiaLi, Xiaohang论文数: 0 引用数: 0 h-index: 0机构: King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia King Abdullah Univ Sci & Technol KAUST, Elect & Comp Engn Program, CEMSE Div, Adv Semicond Lab, Thuwal 239556900, Saudi Arabia
- [49] Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V-1 s-1ADVANCED ELECTRONIC MATERIALS, 2017, 3 (04):Esro, Mazran论文数: 0 引用数: 0 h-index: 0机构: Univ Lancaster, Dept Engn, Lancaster LA1 4YR, England Univ Lancaster, Dept Engn, Lancaster LA1 4YR, EnglandKolosov, Oleg论文数: 0 引用数: 0 h-index: 0机构: Univ Lancaster, Quantum Technol Ctr, Dept Phys, Lancaster LA1 4YW, England Univ Lancaster, Dept Engn, Lancaster LA1 4YR, EnglandStolojan, Vlad论文数: 0 引用数: 0 h-index: 0机构: Univ Surrey, Adv Technol Inst Elect & Elect Engn, Guildford GU2 7HX, Surrey, England Univ Lancaster, Dept Engn, Lancaster LA1 4YR, EnglandJones, Peter J.论文数: 0 引用数: 0 h-index: 0机构: Univ Lancaster, Dept Engn, Lancaster LA1 4YR, England Univ Lancaster, Dept Engn, Lancaster LA1 4YR, EnglandMilne, William I.论文数: 0 引用数: 0 h-index: 0机构: Univ Cambridge, Dept Engn, 9 JJ Thomson Ave, Cambridge CB3 0FA, England Tokyo Inst Technol, Quantum Nanoelect Res Ctr QNERC, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528550, Japan Univ Lancaster, Dept Engn, Lancaster LA1 4YR, EnglandAdamopoulos, George论文数: 0 引用数: 0 h-index: 0机构: Univ Lancaster, Dept Engn, Lancaster LA1 4YR, England Univ Lancaster, Dept Engn, Lancaster LA1 4YR, England
- [50] High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed LayersAPPLIED PHYSICS EXPRESS, 2010, 3 (03)Nakao, Shoichiro论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan KAST, Kawasaki, Kanagawa 2130012, JapanYamada, Naoomi论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan KAST, Kawasaki, Kanagawa 2130012, JapanHitosugi, Taro论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan Tohoku Univ, Adv Inst Mat Res WPI, Sendai, Miyagi 9808577, Japan KAST, Kawasaki, Kanagawa 2130012, JapanHirose, Yasushi论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan KAST, Kawasaki, Kanagawa 2130012, JapanShimada, Toshihiro论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan KAST, Kawasaki, Kanagawa 2130012, JapanHasegawa, Tetsuya论文数: 0 引用数: 0 h-index: 0机构: KAST, Kawasaki, Kanagawa 2130012, Japan Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan KAST, Kawasaki, Kanagawa 2130012, Japan