High carrier mobility up to 1.4cm2·V -1·s-1 in non-peripheral octahexyl phthalocyanine

被引:0
|
作者
Synthetic Nano-Function Materials Group, Research Institute for Ubiquitous Energy Devices, Kansai Centre, Ikeda, Osaka 563-8577, Japan [1 ]
不详 [2 ]
不详 [3 ]
机构
来源
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Hole mobility
引用
下载
收藏
相关论文
共 50 条
  • [1] High Carrier Mobility up to 1.4 cm2.V-1.s-1 in Non-Peripheral Octahexyl Phthalocyanine
    Miyake, Yasuo
    Shiraiwa, Youyu
    Okada, Keizo
    Monobe, Hirosato
    Hori, Tetsuro
    Yamasaki, Naoyuki
    Yoshida, Hiroyuki
    Cook, Michael J.
    Fujii, Akihiko
    Ozaki, Masanori
    Shimizu, Yo
    APPLIED PHYSICS EXPRESS, 2011, 4 (02)
  • [2] High Carrier Mobility of 3.8 cm2 V-1 s-1 in Polydiacetylene Thin Films Polymerized by Electron Beam Irradiation
    Kato, Takuji
    Yasumatsu, Mao
    Origuchi, Chikako
    Tsutsui, Kyoji
    Ueda, Yasukiyo
    Adachi, Chihaya
    APPLIED PHYSICS EXPRESS, 2011, 4 (09)
  • [3] High carrier mobility up to 0.1 cm2V-1s-1 at ambient temperatures in thiophene-based smectic liquid crystals
    Funahashi, M
    Hanna, JI
    ADVANCED MATERIALS, 2005, 17 (05) : 594 - +
  • [4] Undoped polythiophene field-effect transistors with mobility of 1 cm2 V-1 s-1
    Hamadani, B. H.
    Gundlach, D. J.
    McCulloch, I.
    Heeney, M.
    APPLIED PHYSICS LETTERS, 2007, 91 (24)
  • [5] Nondispersive hole transport in a polyfluorene copolymer with a mobility of 0.01 cm2 V-1 s-1
    Fong, H. H.
    Papadimitratos, Alexios
    Malliaras, George G.
    APPLIED PHYSICS LETTERS, 2006, 89 (17)
  • [6] CVD-deposited Cu2O thin films with a record Hall hole mobility of 263 cm2 V-1 s-1 and field-effect mobility of 0.99 cm2 V-1 s-1
    Singh, Vivek
    Sinha, Jyoti
    Shivashankar, S. A.
    Avasthi, Sushobhan
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (22) : 7356 - 7366
  • [7] Amorphous ZnOxNy thin films with high electron Hall mobility exceeding 200 cm2 V-1 s-1
    Yamazaki, Takanori
    Shigematsu, Kei
    Hirose, Yasushi
    Nakao, Shoichiro
    Harayama, Isao
    Sekiba, Daiichiro
    Hasegawa, Tetsuya
    APPLIED PHYSICS LETTERS, 2016, 109 (26)
  • [8] Carrier Mobility up to 106 cm2 V-1 s-1 Measured in Single-Crystal Diamond by the Time-of-Flight Electron-Beam-Induced-Current Technique
    Portier, A.
    Donatini, F.
    Dauvergne, D.
    Gallin-Martel, M. -l.
    Pernot, J.
    PHYSICAL REVIEW APPLIED, 2023, 20 (02)
  • [9] Anisotropic ambipolar carrier transport and high bipolar mobilities up to 0.1 cm2 V-1 s-1 in aligned liquid-crystal glass films of oligofluorene
    Chen, Li-Yin
    Ke, Tung-Huei
    Wu, Chung-Chih
    Chao, Teng-Chih
    Wong, Ken-Tsung
    Chang, Ching-Chao
    APPLIED PHYSICS LETTERS, 2007, 91 (16)
  • [10] High Charge-Carrier Mobility of 2.5 cm2 V-1 s-1 from a Water-Borne Colloid of a Polymeric Semiconductor via Smart Surfactant Engineering
    Cho, Jangwhan
    Cheon, Kwang Hee
    Ahn, Hyungju
    Park, Kwang Hun
    Kwon, Soon-Ki
    Kim, Yun-Hi
    Chung, Dae Sung
    ADVANCED MATERIALS, 2015, 27 (37) : 5587 - 5592