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Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

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作者：
Wang, Y. [1 ]
Chen, N.F. [1 ,2 ]
Jiang, Y. [3 ]
Zhang, X.W. [1 ]
机构：
[1] Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[2] National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China
[3] School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
来源：
Journal of Applied Physics | 2009年 / 105卷 / 01期
关键词：
We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure; which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field Bz is considered. By switching the relative magnetization of ferromagnetic layers; the device in discussion shows evident magnetoconductance. In particular; both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation. © 2009 American Institute of Physics;
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