Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics

被引：0
|
作者：
Kumarbekov, Kuat K. [1 ]
Kakimov, Askhat B. [1 ]
Karipbayev, Zhakyp T. [1 ]
Kassymzhanov, Murat T. [1 ]
Brik, Mikhail G. [2 ,3 ,4 ,5 ]
Ma, Chong-geng [6 ]
Piasecki, Michal [4 ]
Suchikova, Yana [7 ]
Kemere, Meldra [8 ]
Konuhova, Marina [8 ]
机构：
[1] Institute of Physical and Technical Sciences, L.N. Gumilyov Eurasian National University, Astana,010008, Kazakhstan
[2] Centre of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences – National Institute of the Republic of Serbia, University of Belgrade, Belgrade, Serbia
[3] Institute of Physics, University of Tartu, Tartu,50411, Estonia
[4] Department of Theoretical Physics, Jan Dlugosz University, Czestochowa, Poland
[5] Academy of Romanian Scientists, Bucharest,050044, Romania
[6] School of Optoelectronic Engineering &CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing,400065, China
[7] The Department of Physics and Methods of Teaching Physics, Berdyansk State Pedagogical University, Berdyansk,71100, Ukraine
[8] Institute of Solid State Physics, University of Latvia, 8 Kengaraga, Riga,LV-1063, Latvia
来源：
Optical Materials: X | 2025年 / 25卷
关键词：
Europium compounds - Gallium compounds - Low temperature production - Luminescence of inorganic solids - Nanocrystals;
D O I：
10.1016/j.omx.2024.100392
中图分类号：
学科分类号：
摘要：
This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain ( © 2024 The Author(s)
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