Development of 450 MHz LTCC power amplifier module for CDMA mobile phone

被引：0
|
作者：
Nanjing Electronic Devices Institute, Nanjing 210016, China [1 ]
机构：
来源：
Guti Dianzixue Yanjiu Yu Jinzhan | 2006年 / 4卷 / 477-480期
关键词：
Code division multiple access;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A 6.78-MHz 100-W Class E Power Amplifier Module with an Adaptive Power Combiner
    Choi, Ui-Gyu
    Yang, Jong-Ryul
    2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2018, : 52 - 54
  • [32] A Voltage-Mode Class-S Power Amplifier for the 450MHz Band
    Wentzel, Andreas
    Meliani, Chafik
    Heinrich, Wolfgang
    40TH EUROPEAN MICROWAVE CONFERENCE, 2010, : 640 - 643
  • [33] An integrated 900-MHz push-pull power amplifier for mobile applications
    Matilainen, MJ
    Nummila, KLI
    Järvinen, EA
    Kalajo, SJK
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 861 - 864
  • [34] Triple-mode five-band power amplifier LTCC module for WLAN/GPRS/WCDMA applications
    Lai, Chung-Chi
    Hsu, Yu-Cheng
    Chen, Cheng-Chung
    2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 592 - +
  • [35] Class-S Amplifier at 450 MHz Using GaN-HEMT Power Switch MMICs
    Meliani, Chafik
    Wentzel, Andreas
    Flucke, Jens
    Ersoy, Erhan
    Chaturvedi, Nidhi
    Lossy, Richard
    Schnieder, Frank
    Janke, Bernd
    Freyer, Stephan
    Wuerfl, Hans-Joachim
    Heinrich, Wolfgang
    FREQUENZ, 2009, 63 (3-4) : 55 - 59
  • [36] A high efficiency+20 dBm, 900 MHz power amplifier module in 0.35 μm CMOS
    Kim, JH
    Palmer, B
    Harjani, R
    RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2001, : 149 - 152
  • [37] High-efficiency power amplifier module with nobel biasing circuit for W-CDMA handsets
    Yan, YP
    Hasegawa, Y
    Pan, SY
    Kato, T
    Tsukada, Y
    Iwata, N
    NEC RESEARCH & DEVELOPMENT, 2002, 43 (04): : 320 - 325
  • [38] High-efficiency power amplifier module with Nobel Biasing circuit for W-CDMA handsets
    Yan, Yuepeng
    Hasegawa, Yasuaki
    Pan, Szuying
    Kato, Teruhisa
    Tsukada, Yasutoshi
    Iwata, Naotaka
    NEC Research and Development, 2002, 43 (04): : 320 - 325
  • [39] Stacked FET Structure for Multi-Band Mobile Terminal Power Amplifier Module
    Motoyama, Hideshi
    Jingu, Yoshikatsu
    Kimura, Toshikazu
    Lawrenson, Alan
    Clifton, John C.
    2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
  • [40] 5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar
    Bakalski, W
    Ilkov, N
    Dernovsek, O
    Matz, R
    Simbürger, W
    Weger, P
    Scholtz, AL
    ELECTRONICS LETTERS, 2003, 39 (04) : 375 - 376
12345