Fabrication and photonic properties of 1-D II-VI semiconductor nanostructures

被引:0
|
作者
Micro-nano-Technology Researches Center, Hunan University, Changsha 410000, China [1 ]
机构
来源
Guangdianzi Jiguang | 2006年 / SUPPL.卷 / 27-29期
关键词
Excitons - Fabrication - Luminescence - Semiconductor materials;
D O I
暂无
中图分类号
学科分类号
摘要
One dimensional semiconducting materials show perfect crystal and excellent optical properties due to the quantum confinement and optical cavity effect, may find applications in future micro- and nano-photonic devices. In this paper author reviewed recent results on the fabrication and photonic properties of various nanowires (nanbeits) in the top level labs, discussed the developing directions in this field. Furthermore, author reported a series of findings in his own group, including the formation of II-VI semiconductor nanowires (nanobelts), and their luminescence and lasing behaviors, discussed the different lasing mechanisms in varied nanostructures, like exciton-exciton interaction, bipolaronic exciton coherent emission and plasmas. These findings will facilitate the fabrication of new photonic devices in the near future.
引用
收藏
相关论文
共 50 条
  • [31] Synthesis and optical properties of II-VI semiconductor quantum dots: a review
    Al-Douri, Y.
    Khan, Mohammad Mansoob
    Jennings, James Robert
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (11)
  • [32] Self formation and optical properties of II-VI semiconductor wire structures
    Inst of Physical and Chemical, Research , Sendai, Japan
    Jpn J Appl Phys Part 2 Letter, 11 B (L1490-L1493):
  • [33] Magic-size semiconductor nanoclusters in the (II-VI)13 and (II-VI)34 families
    Zhou, Yang
    Wang, Yuanyuan
    Wang, Fudong
    Buhro, William
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2016, 252
  • [34] Self formation and optical properties of II-VI semiconductor wire structures
    Zhang, BP
    Wang, WX
    Yasuda, T
    Li, YQ
    Segawa, Y
    Yaguchi, H
    Onabe, K
    Edamatsu, K
    Itoh, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B): : L1490 - L1493
  • [35] Phonons on II-VI (110) semiconductor surfaces
    Tütüncü, HM
    Miotto, R
    Srivastava, GP
    PHYSICAL REVIEW B, 2000, 62 (23): : 15797 - 15805
  • [36] Novel ferroelectricity in II-VI semiconductor ZnO
    Onodera, A
    FERROELECTRICS, 2002, 267 : 131 - 137
  • [37] Beryllium containing II-VI semiconductor devices
    Waag, A
    Fischer, F
    Lugauer, HJ
    Schull, K
    Zehnder, U
    Gerhard, T
    Keim, M
    Reuscher, G
    Landwehr, G
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 30 - 38
  • [38] Tunable defect states in 1-D photonic bandgap nanostructures
    Tabunshchyk, Kyrylo
    Hawkeye, Matthew M.
    Brett, Michael J.
    Kovalenko, Andriy
    TUNING THE OPTIC RESPONSE OF PHOTONIC BANDGAP STRUCTURES III, 2006, 6322
  • [39] Structural transformations in II-VI semiconductor nanocrystals
    Ricolleau, C
    Audinet, L
    Gandais, M
    Gacoin, T
    EUROPEAN PHYSICAL JOURNAL D, 1999, 9 (1-4): : 565 - 570
  • [40] Ferromagnetism in II-VI based semiconductor structures
    Cibert, J
    Ferrand, D
    Tatarenko, S
    Wasiela, A
    Kossacki, P
    Dietl, T
    ACTA PHYSICA POLONICA A, 2001, 100 (02) : 227 - 236