Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

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作者：
Lim, Phyllis S.Y. [1 ]
Lee, Rinus T.P. [1 ]
Sinha, Mantavya [1 ]
Chi, Dong Zhi [2 ]
Yeo, Yee-Chia [1 ]
机构：
[1] Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 117576, Singapore
[2] Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A,STAR), 3 Research Link, Singapore 117602, Singapore
来源：
Journal of Applied Physics | 2009年 / 106卷 / 04期
关键词：
The effective electron Schottky barrier height (φBN) of nickel silicide (NiSi:C) formed on silicon-carbon (Si 1-yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. φBN was observed to decrease substantially with an increase in Csub. When C sub is increased from 0% to 1.5%; φBN is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n -channel metal-oxide-semiconductor field-effect transistors. © 2009 American Institute of Physics;
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