Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing

被引：0

作者：

Bentzen, A. ^{[1
]}

Holt, A. ^{[1
]}

Kopecek, R. ^{[2
]}

Stokkan, G. ^{[3
]}

Christensen, J.S. ^{[3
]}

Svensson, B.G. ^{[3
]}

机构：

[1] Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller, Norway

[2] Department of Physics, University of Konstanz, Jakob-Burckhardt-Strasse 27, D-78464 Konstanz, Germany

[3] Department of Materials Technology, Norwegian University of Science and Technology, Alfred Getz vei 2, NO-7491 Trondheim, Norway

来源：

Journal of Applied Physics | 2006年 / 99卷 / 09期

关键词：

We have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions of high initial recombination lifetime exhibit a significant lifetime enhancement upon phosphorus diffusion gettering. Nevertheless; transition metal profiles extracted by secondary ion mass spectrometry in a region of low initial lifetime reveal significant gradients in Cr; Fe; and Cu concentrations towards the surface after the emitter diffusion; without exhibiting a significant enhancement in the lifetime. In a region of higher initial lifetime; however; diminutive concentration gradients of the transition metal impurities are revealed; indicating a significantly lower initial concentration in these regions. From spatial maps of the dislocation density in the wafers; we find that lifetime enhancements mainly occur in regions of low dislocation density. Thus; it is believed that a generally higher concentration of transition metals combined with an impurity decoration of dislocations in regions of high dislocation density limit the initial lifetime and the lifetime after the phosphorus diffusion; in spite of the notable gettering of transition metal impurities towards the surface in these regions. Furthermore; after a hydrogen release from overlying silicon nitride layers; we observe that only regions of low dislocation density experience a significant lifetime enhancement. This is attributed to impurity decoration of the dislocations in the regions of both high dislocation density and high transition metal impurity concentration; reducing the ability of hydrogen to passivate dislocations in these regions. © 2006 American Institute of Physics;

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