Control of epitaxial growth plane of Rh thin films on A-plane sapphire by sputter deposition

被引：0
|
作者：
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 A卷 / 2731-2735期
关键词：
Control of epitaxial growth plane - Resistivity - Rf sputtering - XRD;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Control of epitaxial growth plane of Rh thin films on A-plane sapphire by sputter deposition
    Kato, K
    Sasaki, K
    Abe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A): : 2731 - 2735
  • [2] Effect of substrate temperature on epitaxial orientation of Rh thin films sputtered on A-plane sapphire
    Kato, Myohiko
    Sasaki, Katsutaka
    Abe, Yoshio
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 7097 - 7099
  • [3] Effect of substrate temperature on epitaxial orientation of Rh thin films sputtered on A-plane sapphire
    Kato, Kiyohiko
    Sasaki, Katsutaka
    Abe, Yoshio
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 7097 - 7099
  • [4] Epitaxial growth of gallium nitride thin films on A-plane sapphire by molecular beam epitaxy
    Doppalapudi, D
    Iliopoulos, E
    Basu, SN
    Moustakas, TD
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3582 - 3589
  • [5] Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
    Xie, Yong
    Madel, Manfred
    Zoberbier, Thilo
    Reiser, Anton
    Jie, Wanqi
    Neuschl, Benjamin
    Biskupek, Johannes
    Kaiser, Ute
    Feneberg, Martin
    Thonke, Klaus
    APPLIED PHYSICS LETTERS, 2012, 100 (18)
  • [6] Growth of GaN on a-plane sapphire:: in-plane epitaxial relationships and lattice parameters
    Paskova, T
    Darakchieva, V
    Valcheva, E
    Paskov, PP
    Monemar, B
    Heuken, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 318 - 321
  • [7] Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition -: art. no. 083535
    Kakehi, Y
    Satoh, K
    Yotsuya, T
    Nakao, S
    Yoshimura, T
    Ashida, A
    Fujimura, N
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)
  • [8] Growth of a-plane GaN films on r-plane sapphire substrates by metalorganic chemical vapour deposition
    Li, DS
    Chen, H
    Yu, HB
    Zheng, XH
    Huang, Q
    Zhou, JM
    CHINESE PHYSICS LETTERS, 2004, 21 (05) : 970 - 971
  • [9] Morphology evolution of a-plane ZnO films on r-plane sapphire with growth by pulsed laser deposition
    Peng, Chun-Yen
    Tian, Jr-Sheng
    Wang, Wei-Lin
    Ho, Yen-Teng
    Chang, Li
    APPLIED SURFACE SCIENCE, 2013, 265 : 553 - 557
  • [10] Refractive indices of A-plane GaN thin films on R-plane sapphire
    Cai, A. L.
    Wellenius, I. P.
    Gerhold, M.
    Muth, J. F.
    Osinsky, A.
    Xie, J. Q.
    Dong, J. W.
    GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 581 - +
12345