Defect formation mechanisms for ZnSe with isovalent oxygen impurity

被引：0
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作者：
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., 58012 Chernivtsi, Ukraine [1 ]
不详 [2 ]
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来源：
Telecommun Radio Eng | 2007年 / 13卷 / 1205-1211期
关键词：
Semiconducting zinc compounds;
D O I：
10.1615/TelecomRadEng.v66.i13.70
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