Etch properties of TiN thin film in metal-insulator-metal capacitor using inductively coupled plasma

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School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-759, Korea, Republic of [1 ]
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Jpn. J. Appl. Phys. | / 8 PART 3卷
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Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
Tin - Inductively coupled plasma - Argon - Etching - Metal insulator boundaries - Flow of gases - Titanium nitride - X ray photoelectron spectroscopy - Metallic films - Titanium dioxide - Ion bombardment - Thin films
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