Enhanced mass transport in ultrarapidly heated Ni/Si thin-film multilayers

被引：0
|
作者：
Cook, L.P. [1 ,2 ]
Cavicchi, R.E. [1 ]
Bassim, N. [1 ,3 ]
Eustis, S. [1 ,4 ]
Wong-Ng, W. [1 ]
Levin, I. [1 ]
Kattner, U.R. [1 ]
Campbell, C.E. [1 ]
Montgomery, C.B. [1 ]
Egelhoff, W.F. [1 ]
Vaudin, M.D. [1 ]
机构：
[1] National Institute of Standards and Technology, Gaithersburg, MD 20899, United States
[2] PhazePro Technologies, LLC, Hustontown, PA 17229, United States
[3] Naval Research Laboratory, Washington, DC 20375, United States
[4] Directed Vapor Technologies International, Inc., Charlottesville, VA 22903, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 10期
关键词：
We investigated multilayer and bilayer Ni/Si thin films by nanodifferential scanning calorimetry (nano-DSC) at ultrarapid scan rates; in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan rates as well; where it was possible to conduct parallel rapid thermal annealing experiments for comparison. Postexperimental characterization was accomplished by x-ray diffraction; and by transmission electron microscopy (TEM) and energy-filtered TEM of thin cross sections prepared by focused ion beam milling. We found that rate of heating has a profound effect on the resulting microstructure; as well as on the DSC signal. After heating to 560 °C at 120 °C/s; the general microstructure of the multilayer was preserved; in spite of extensive interdiffusion of Ni and Si. By contrast; after heating to 560 °C at 16000 ° C/s; the multilayer films were completely homogeneous with no evidence of the original multilayer microstructure. For the slower scan rates; we interpret the results as indicating a solid state diffusion-nucleation-growth process. At the higher scan rates; we suggest that the temperature increased so rapidly that a metastable liquid was first formed; resulting in complete intermixing of the multilayer; followed by crystallization to form solid phases. The integrated DSC enthalpies for both multilayer and bilayer films are consistent with this interpretation; which is further supported by thermodynamic predictions of metastable Ni/Si melting and solid state Ni/Si interdiffusion. Our results suggest that use of heating rates > 10000 °C/s may open new avenues for intermetallic micro- and nanofabrication; at temperatures well below those prevailing during explosive silicidation. © 2009 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Improvement of Photodegradation of Silicon Thin-film Solar Cells by pc-Si:H/a-Si:H Multilayers
    Jiang, Yeu-Long
    Chen, Chun-Yen
    Kuo, Tai-Chao
    Yu, Tuan-Jen
    INTERNATIONAL CONFERENCE ON MATERIALS FOR ADVANCED TECHNOLOGIES 2011, SYMPOSIUM O, 2012, 15 : 248 - 257
  • [22] Thin-film formation of Si clathrates on Si wafers
    Ohashi, Fumitaka
    Iwai, Yoshiki
    Noguchi, Akihiro
    Sugiyama, Tomoya
    Hattori, Masashi
    Ogura, Takuya
    Himeno, Roto
    Kume, Tetsuji
    Ban, Takayuki
    Nonomura, Shuichi
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2014, 75 (04) : 518 - 522
  • [23] SILT TRANSPORT BY THIN-FILM FLOW
    PODMORE, TH
    MERVA, GE
    TRANSACTIONS OF THE ASAE, 1971, 14 (06): : 1065 - &
  • [24] TRANSPORT IN ORGANIC THIN-FILM TRANSISTORS
    TORSI, L
    DODABALAPUR, A
    KATZ, HE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 314 - PMSE
  • [25] QUANTUM TRANSPORT IN THIN-FILM STRUCTURES
    BULKA, B
    BARNAS, J
    ACTA PHYSICA POLONICA A, 1994, 85 (02) : 465 - 468
  • [26] Thin-film resistance sensor for measuring liquid mass fraction in super-heated refrigerant
    Shannon, MA
    Leicht, TM
    Hrnjak, PS
    Miller, NR
    Khan, FA
    SENSORS AND ACTUATORS A-PHYSICAL, 2001, 88 (02) : 164 - 177
  • [27] Enhanced Charge Transport in Polymer Thin-Film Transistors Prepared by Contact Film Transfer Method
    Wei, Qingshuo
    Miyanishi, Shoji
    Tajima, Keisuke
    Hashimoto, Kazuhito
    ACS APPLIED MATERIALS & INTERFACES, 2009, 1 (11) : 2660 - 2666
  • [28] THE OPTICAL BANDGAP OF MULTILAYERS OF A-SI-H AND ALLOYS - A COMPARISON OF EXPERIMENT AND THIN-FILM OPTICS CALCULATIONS
    BERNHARD, N
    DITTRICH, H
    BAUER, GH
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 1103 - 1106
  • [29] Thermal transient analysis of thin film multilayers heated by pulsed laser
    Angelucci, N
    Bianco, N
    Manca, O
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1997, 40 (18) : 4487 - 4491
  • [30] ENHANCED OPTICAL THIN-FILM MATERIALS
    ALLEN, TH
    BEAUCHAMP, WT
    HICHWA, BP
    PHOTONICS SPECTRA, 1991, 25 (03) : 103 - &
12345