A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

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作者：
Li, Flora M. [1 ,6 ]
Nathan, Arokia [2 ]
Wu, Yiliang [3 ]
Ong, Beng S. [4 ,5 ]
机构：
[1] Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
[2] London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
[3] Xerox Research Centre of Canada, Mississauga, ON L5K 2L1, Canada
[4] Institute of Materials Research and Engineering (IMRE), Singapore 117602, Singapore
[5] School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
[6] Engineering Department, Cambridge University, Cambridge, CB3 0FA, United Kingdom
来源：
Journal of Applied Physics | 2008年 / 104卷 / 12期
关键词：
This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs); with solution-processed poly[5; 5; -bis(3-dodecyl-2-thienyl)-2; 2 -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases; with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric; preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration; where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics;
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