Effect of nitrogen flow ratio on the microstructure evolution and nanoindented mechanical property of the Ta-Si-N thin films

被引:0
|
作者
Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan [1 ]
机构
来源
J Mater Res | 2008年 / 2卷 / 494-499期
关键词
D O I
10.1557/jmr.2008.0065
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films
    Olowolafe, JO
    Rau, I
    Unruh, KM
    Swann, CP
    Jawad, ZS
    Alford, T
    THIN SOLID FILMS, 2000, 365 (01) : 19 - 21
  • [22] Effect of the target shuttering on the characteristics of the Ta-Si-N thin films by reactive magnetron co-sputtering
    Chung, C. K.
    Chen, T. S.
    Nautiyal, A.
    Chang, N. W.
    Hung, S. T.
    SURFACE & COATINGS TECHNOLOGY, 2009, 204 (6-7): : 1071 - 1075
  • [23] Effect of Nitrogen Flow Ratios on the Microstructure and Properties of Ta-Al-N Thin Films by Reactive Cosputtering
    Chung, C. K.
    Chen, T. S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (02) : H119 - H122
  • [24] EFFECT OF N CONTENT ON THE THERMAL STABILITY OF Ta-Si-N THIN FILM BARRIER LAYER
    Zhou, Jicheng
    Liu, Zheng
    Zheng, Xuqiang
    Li, Youzhen
    Luo, Ditian
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2010, 24 (30): : 5867 - 5875
  • [25] Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering
    Oezer, D.
    Ramirez, G.
    Rodil, S. E.
    Sanjines, R.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (11)
  • [26] Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization
    A. V. Kuchuk
    V. P. Klad’ko
    V. F. Machulin
    A. Piotrowska
    Technical Physics, 2006, 51 : 1383 - 1385
  • [27] Thermal stability of thin amorphous Ta-Si-N films used in Au/GaN metallization
    Kuchuk, A. V.
    Klad'ko, V. P.
    Machulin, V. F.
    Piotrowska, A.
    TECHNICAL PHYSICS, 2006, 51 (10) : 1383 - 1385
  • [28] Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers
    Cabral, C
    Saenger, KL
    Kotecki, DE
    Harper, JME
    JOURNAL OF MATERIALS RESEARCH, 2000, 15 (01) : 194 - 198
  • [29] Oxidation resistance and mechanical property of cosputtered quasi-amorphous Ta-Si-N films under vacuum rapid thermal annealing
    Chung, C. K.
    Chen, T. S.
    Chang, N. W.
    Chang, S. C.
    Liao, M. W.
    SURFACE & COATINGS TECHNOLOGY, 2010, 205 (05): : 1268 - 1272
  • [30] Effect of nitrogen on mechanical properties of thin films of the Ta-B-N system
    Dub, S. N.
    Goncharov, A. A.
    Petukhov, V. V.
    JOURNAL OF SUPERHARD MATERIALS, 2009, 31 (02) : 71 - 77