Magnetostriction of Fe-X (X = Al, Ga, Si, Ge) intermetallic alloys

被引:30
|
作者
Institute of Solid State Physics, Technological University of Vienna, Vienna A-1040, Austria [1 ]
机构
来源
IEEE Trans Magn | 2008年 / 11 PART 2卷 / 3001-3004期
关键词
Intermetallics - Aluminum alloys - Magnetostriction - Silicon alloys - Chemical analysis - Binary alloys - Gallium alloys;
D O I
10.1109/TMAG.2008.2002256
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学科分类号
摘要
The dependence of the room temperature magnetostriction on substituting Fe by different X elements (X = Al, Ga, Si, Ge) is discussed. All Fe-X alloys exhibit at the Fe-rich side a similar phase diagram where first a disordered A2 and then an ordered B2 and/or DO3 structure is formed. The magnetostriction λ100 increases with increasing substitution exhibiting a first maximum close to 20 at. % for Ga and Al, 10 at. % for Ge, and 5 at. % for Si. The reported magnetostriction behavior of Fe-Ga is similar to that of Fe-Al alloys, while the magnetostriction behavior of Fe-Ge is similar to that Fe-Si alloys. However, for all these alloys, the increase of magnetostriction is observed in disordered A2 structure. In the first case, the magnetostriction behavior can be correlated with the lattice constant, which can be taken as a hint that the substitution of larger X-ions causes a local distortion-as was shown for Fe-Ga by an electron spectroscopy for chemical analysis (ESCA) analysis. The higher this local distortion is, the larger is the enhancement of λ100. Additionally, the magnetostriction behavior is influenced also by electronic and structural configurations. © 2008 IEEE.
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