Effect of the oxygen partial pressure on properties of indium gallium zinc oxide thin film transistors

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[1] Liu, Yuan-Yuan
[2] Tong, Yang
[3] Wang, Xue-Xia
[4] Wang, Kun-Lun
[5] Song, Shu-Mei
[6] Yang, Tian-Lin
来源：
Yang, Tian-Lin | 1600年 / Chinese Ceramic Society卷 / 43期
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Thin film transistors;
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