Electrical and optical properties of Li-doped ZnO nanorods

被引：0

作者：

Wang, Xiang-Hu ^{[1
]}

Li, Rong-Bin ^{[1
]}

Cong, Chun-Xiao ^{[2
]}

机构：

[1] School of Mechanical Engineering, Shanghai Dianji University, Shanghai 200245, China

[2] Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2010年 / 31卷 / 02期

关键词：

Chemical vapor deposition - II-VI semiconductors - Hall mobility - Hole mobility - Zinc oxide - Crystal structure - Silicon compounds - Zinc sulfide - Optical properties - Lithium compounds - Nanorods;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Li-doped ZnO nanorods was grown on n-Si (111) substrate by chemical vapor deposition. XRD pattern showed that the nanorods are pure wurtzite ZnO of hexagonal crystal structure without any other oxide, such as Li2O. Hall effect experiment under Van der Pauw configuration showed that Li-doped ZnO nanorods behave the p-type conductivity with hole concentration of 6.72×1016 cm-3 and a Hall mobility of 2.46 cm2 ·V-1·s-1. A neutral acceptor-bound exciton emission (A°X) was confirmed by the measurements of temperature-dependent photoluminescence (PL) spectra. The optical acceptor energy level is calculated to be about 142 meV.

引用

页码：243 / 247

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