Optical cross sections of deep levels in 4H-SiC

被引：0
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作者：
Kato, M. [1 ]
Tanaka, S. [1 ]
Ichimura, M. [1 ]
Arai, E. [1 ]
Nakamura, S. [2 ]
Kimoto, T. [2 ]
Pässler, R. [3 ]
机构：
[1] Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
[2] Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
[3] Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany
来源：
Journal of Applied Physics | 2006年 / 100卷 / 05期
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