The experimental investigation on preparation of Li-doped ZnO ceramic targets and sputtering thin films

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作者：
School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China [1 ]
不详 [2 ]
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来源：
Gongneng Cailiao | 2006年 / 4卷 / 583-586+590期
关键词：
Ceramic materials - Concentration (process) - Dielectric losses - Doping (additives) - Electric properties - Lithium - Lithium compounds - Magnetron sputtering - Optimization - Targets;
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摘要：
We have successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10-15mm in thicknesss by solid-state reaction. This paper studied the influence of concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the insulative resistivity (IR) and dielectric loss(tgδ), the optimum concentration of Li+ doped in ZnO ceramic target was obtained (for 2.2 mol%). And the optimum process for preparing ZnO ceramic target was also realized through the investigation of sintering temperatures and molding pressure. By using Li0.022-doped ZnO ceramic as the target, the ZnO films with highly c-axis (002) preferred orientation have been grown by RF magnetron sputtering on Si(100), glass and Pt(111)/Ti/SiO2/Si(100) substrates respectively.
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