Effect of cubic phase evolution on field emission properties of boron nitride island films

被引：0
|
作者：
Teii, Kungen [1 ]
Yamao, Ryota [1 ]
Matsumoto, Seiichiro [2 ,3 ]
机构：
[1] Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
[2] National Institute for Materials Science, Ceramic Forum Co. Ltd., Exploratory Materials Research Laboratory for Energy and Environment, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
[3] Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016, Japan
来源：
Journal of Applied Physics | 2009年 / 106卷 / 11期
关键词：
Field emission performance of boron nitride (BN) island films is studied in terms of cubic phase evolution in plasma-enhanced chemical vapor deposition. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (∼20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy reveals that the electron affinity is as low as 0.3 eV for both sp 2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/ cm2. The emission is facilitated by the larger field enhancement due to the larger roughness and the higher conduction of cBN islands. The potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level; while it is only about 0.3 eV for conduction band emission. © 2009 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
下载
收藏
相关论文
共 50 条
  • [1] Effect of cubic phase evolution on field emission properties of boron nitride island films
    Teii, Kungen
    Yamao, Ryota
    Matsumoto, Seiichiro
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)
  • [2] Field emission mechanism from nanocrystalline cubic boron nitride films
    Wang, B
    Wang, RZ
    Zhou, H
    Yan, XH
    Cao, JX
    Wang, H
    Yan, H
    MICROELECTRONICS JOURNAL, 2004, 35 (04) : 371 - 374
  • [3] Effect of turbostratic boron nitride buffer layers on stress evolution of cubic boron nitride films
    Kim, HS
    Baik, YJ
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) : 3473 - 3476
  • [4] Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains
    Kimura, C
    Yamamoto, T
    Sugino, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (03): : 1051 - 1054
  • [5] On the nucleation of the cubic phase in boron nitride films
    Ye, Jian
    Oechsner, Hans
    THIN SOLID FILMS, 2006, 514 (1-2) : 138 - 144
  • [6] Synthesis of cubic boron nitride films on Si tips via chemical vapor deposition and the field emission properties
    Kobayashi, Masanori
    Miyashita, Hidetoshi
    Inomata, Naoki
    Ono, Takahito
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02):
  • [7] Field emission from aluminum nitride and cubic boron nitride coatings
    Wojak, GJ
    Choi, WB
    Myers, AF
    Cuomo, JJ
    Hren, JJ
    IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1996, : 217 - 220
  • [8] Field emission characteristics of boron nitride films
    Sugino, T
    Etou, Y
    Tagawa, S
    Gamo, MN
    Ando, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 1089 - 1092
  • [9] On the initial cubic phase nucleation in boron nitride films
    Ye, J
    Oechsner, H
    TRENDS AND NEW APPLICATIONS OF THIN FILMS, 1998, 287-2 : 251 - 251
  • [10] Field emission characteristics of boron nitride films
    Lee, Dong-Gu
    Baik, Dong-Ki
    Kang, Nam-Seok
    Cho, Won-Ki
    Yoon, Sang-Jo
    Kim, Tae-Young
    Hwang, Hyun-Deog
    Ahn, Dong-Hoon
    Park, Myung-Ho
    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2000, 18 (02): : 1085 - 1088
12345