Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films

被引:0
|
作者
机构
[1] Xu, Dinglin
[2] Xiong, Ying
[3] Tang, Minghua
[4] Zeng, Baiwen
来源
Tang, M. (mhtang@xtu.edu.cn) | 1600年 / Elsevier Ltd卷 / 584期
关键词
Sol-gel process;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Understanding the coexistence of unipolar and bipolar resistive switching in NiFe2O4 resistive memory devices
    Li, Jiacheng
    Yao, Chuangye
    Ke, Yifu
    Huang, Wenhua
    Thatikonda, Santhosh Kumar
    Qin, Ni
    Bao, Dinghua
    APPLIED PHYSICS LETTERS, 2022, 120 (13)
  • [22] Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films
    Chang, Wen-Yuan
    Peng, Ching-Shiang
    Lin, Cheng-Hung
    Tsai, Jui-Ming
    Chiu, Fu-Chien
    Chueh, Yu-Lun
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (09) : H872 - H875
  • [23] Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells
    Sun, Xianwen
    Li, Guoqiang
    Zhang, Xin'an
    Ding, Linghong
    Zhang, Weifeng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (12)
  • [24] Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
    Liu, Lu
    Zhang, Shantao
    Luo, Ying
    Yuan, Guoliang
    Liu, Junming
    Yin, Jiang
    Liu, Zhiguo
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
  • [25] Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
    马寒露
    王中强
    徐海阳
    张磊
    赵晓宁
    韩曼舒
    马剑钢
    刘益春
    Chinese Physics B, 2016, (12) : 422 - 427
  • [26] Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles
    He, Shuai (stsbdh@mail.sysu.edu.cn), 1600, American Institute of Physics Inc. (123):
  • [27] Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
    Ma, Han-Lu
    Wang, Zhong-Qiang
    Xu, Hai-Yang
    Zhang, Lei
    Zhao, Xiao-Ning
    Han, Man-Shu
    Ma, Jian-Gang
    Liu, Yi-Chun
    CHINESE PHYSICS B, 2016, 25 (12)
  • [28] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    Chang, Wen-Yuan
    Lai, Yen-Chao
    Wu, Tai-Bor
    Wang, Sea-Fue
    Chen, Frederick
    Tsai, Ming-Jinn
    APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [29] Coexistence of unipolar and bipolar resistive switching behaviors in NiFe2O4 thin film devices by doping Ag nanoparticles
    Hao, Aize
    Ismail, Muhammad
    He, Shuai
    Huang, Wenhua
    Qin, Ni
    Bao, Dinghua
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (08)
  • [30] Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory
    Hyeongwoo Yu
    Minho Kim
    Yoonsu Kim
    Jeongsup Lee
    Kyoung-Kook Kim
    Sang-Jun Choi
    Soohaeng Cho
    Electronic Materials Letters, 2014, 10 : 321 - 324