Photoelectric properties of InAs/GaSb type-II superlattices

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作者：
Shi, Yanli [1 ]
Li, Fan [1 ]
Zhao, Lusheng [1 ]
Xu, Wen [2 ]
机构：
[1] Kunming Institute of Physics, Kunming 650223, China
[2] Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2011年 / 40卷 / 06期
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页码：981 / 985
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