A review of GaN-based semiconductors for photoelectrochemical water splitting

Photoelectrochemical water splitting has emerged as a key technology for harnessing clean and renewable hydrogen energy. Gallium nitride (GaN) has gained attention as a promising material for this purpose due to its strong chemical bonds, resistance to electrolyte corrosion, favorable redox potentials for water reactions, and high carrier mobility facilitating efficient charge transfer. In addition, the bandgap of GaN can be tuned using Indium doping to optimize visible light absorption. Here, we provide a comprehensive review of the methods proposed by our research group and others to enhance the efficiency of GaN-based semiconductors for photoelectrochemical water splitting, with a particular focus on nanostructures, co-catalysts and heterojunctions. This work paves the way for the development of efficient photoelectrochemical water splitting solutions for a sustainable hydrogen future. © 2024 Hydrogen Energy Publications LLC