Temperature field optimization and polytype control in the growth of 6H-SiC single crystal

被引:0
|
作者
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China [1 ]
机构
来源
Rengong Jingti Xuebao | 2006年 / 1卷 / 41-44期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate
    Diani, M
    Simon, L
    Kubler, L
    Aubel, D
    Matko, I
    Chenevier, B
    Madar, R
    Audier, M
    JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 95 - 102
  • [2] Evolution roots of growth-induced polytype domains in 6H-SiC single crystals
    Seo, SH
    Song, JS
    Oh, RH
    Wang, YZ
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 43 - 46
  • [3] Polytype control in 6H-SiC grown via sublimation method
    Li, Xianxiang
    Jiang, Shouzhen
    Hu, Xiaobo
    Dong, Jie
    Li, Juan
    Chen, Xiufang
    Wang, Li
    Xu, Xiangang
    Jiang, Minhua
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 95 - +
  • [4] Helices in the 6H-SiC single crystal
    Cheng, Jikuan
    Gao, Jiqiang
    Liu, Junlin
    Jiang, Xian
    Yang, Jianfeng
    Qiao, Guanjun
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2007, 36 (SUPPL. 2): : 184 - 186
  • [5] Helices in the 6H-SiC single crystal
    Cheng Jikuan
    Gao Jiqiang
    Liu Junlin
    Jiang Xian
    Yang Jianfeng
    Qiao Guanjun
    RARE METAL MATERIALS AND ENGINEERING, 2007, 36 : 184 - 186
  • [6] Characterization of Polytype Distributions in Nitrogen-doped 6H-SiC Single Crystal by Raman Mapping
    Guo Xiao
    Liu Xue-Chao
    Xin Jun
    Yang Jian-Hua
    Shi Er-Wei
    JOURNAL OF INORGANIC MATERIALS, 2012, 27 (06) : 609 - 614
  • [7] Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach
    Kang, Kyung-Han
    Eun, Taihee
    Jun, Myong-Chul
    Lee, Byeong-Joo
    JOURNAL OF CRYSTAL GROWTH, 2014, 389 : 120 - 133
  • [8] Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth
    Tupitsyn, E. Y.
    Arulchakkaravarthi, A.
    Drachev, R. V.
    Sudarshan, T. S.
    JOURNAL OF CRYSTAL GROWTH, 2007, 299 (01) : 70 - 76
  • [9] Sublimation growth of 6H-SiC single crystal along [1100] direction
    Jiang, Shou-Zhen
    Li, Juan
    Chen, Xiu-Fang
    Wang, Ying-Min
    Ning, Li-Na
    Hu, Xiao-Bo
    Xu, Xian-Gang
    Wang, Ji-Yang
    Jiang, Min-Hua
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2007, 36 (01): : 14 - 17
  • [10] Growth of large 6H-SiC single crystals
    Chen, ZZ
    Xiao, B
    Shi, EW
    Zhuang, JY
    Liu, XC
    JOURNAL OF INORGANIC MATERIALS, 2002, 17 (04) : 685 - 690