Research on RF performance of GaN HEMT with graded Al composition AlGaN back-barrier

被引：0

作者：

Zhang, Ruihao ^{[1
]}

Wan, Fayu ^{[1
]}

Xu, Ru ^{[1
]}

Xu, Jiarun ^{[1
]}

Song, Runtao ^{[1
]}

Wang, Long ^{[1
]}

Zhao, Xing ^{[2
]}

机构：

[1] Nanjing Univ Informat Sci & Technol, Dept Elect Informat, Nanjing 210044, Peoples R China

[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China

来源：

MICRO AND NANOSTRUCTURES | 2025年 / 197卷

基金：

中国博士后科学基金;

关键词：

GaN HEMT; RF performance; Graded AlGaN back-barrier; 2DEG confinement;

D O I：

10.1016/j.micrna.2024.208028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we apply AlGaN back-barrier with graded Al composition to effectively improve the RF performance of GaN high electron mobility transistor (HEMT). Simulation results demonstrate that compared with GaN HEMT with fixed Al composition AlGaN back-barrier, graded AlGaN back-barrier HEMT has lower gate capacitance and better two-dimensional electron gas (2DEG) confinement. Its cut-off frequency (ft) and maximum oscillation frequency ( f max ) reach 100 GHz and 179.8 GHz, respectively, an increase of 12.1 GHz and 42.9 GHz. Due to the lower power supply, graded AlGaN back-barrier HEMT also significantly improves the power added efficiency (PAE) compared with HEMT without back-barrier, increasing 20 %. Moreover, it is found that graded AlGaN back-barrier HEMT has better large-signal performance than fixed AlGaN back- barrier HEMT for the better electron confinement.

引用

页数：8

共 50 条

[21] Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes
Fang, Yi
Chen, Ling
Liu, Yuqi
Wang, Hong
MICROMACHINES, 2022, 13 (06)
[22] Numerical investigation of the 2DEG properties of AlGaN/AlN/GaN HEMT structures with InGaN/GaN MQW back-barrier structure
Atmaca, G.
Tasli, P.
Karakoc, G.
Yazbahar, E.
Lisesivdin, S. B.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 65 : 110 - 113
[23] Influence of AlGaN and InGaN Back Barriers on the Performance of AlGaN/GaN HEMT
Singh, Shreyash Pratap
Chaturvedi, Nidhi
IETE TECHNICAL REVIEW, 2016, 33 (01) : 40 - 44
[24] A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN
Wu, Sheng
Mi, Minhan
Zhang, Meng
Yang, Ling
Hou, Bin
Ma, Xiaohua
Hao, Yue
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (11) : 5553 - 5558
[25] DC and RF Performance Analysis of AlGaN/GaN based HEMT
De, Tanmoy
Mohapatra, Meryleen
Panda, A. K.
2016 2ND INTERNATIONAL CONFERENCE ON COMMUNICATION CONTROL AND INTELLIGENT SYSTEMS (CCIS), 2016, : 181 - 184
[26] Full-Quantum Study of AlGaN/GaN HEMTs with InAlN Back-Barrier
Lucci, Luca
Barbe, Jean-Charles
Pala, Marco
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 128 - 131
[27] GATE LEAKAGE CURRENT REDUCTION WITH ADVANCEMENT OF GRADED BARRIER AlGaN/GaN HEMT
Das, Palash
Biswas, Dhrubes
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 972 - 978
[28] A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier
Garg, Tanvika
Kale, Sumit
MICROELECTRONICS RELIABILITY, 2023, 145
[29] Enhancement of Sensing Performance of GaN-Based MOS-HEMT Biosensors by Graded AlGaN Barrier
Liu, Yanli
Liu, Yue
Guo, Haiqiu
Li, Yuan
Ma, Yuzhen
Shen, Hui
Chen, Dunjun
Hu, Xiaolin
IEEE SENSORS JOURNAL, 2024, 24 (15) : 23470 - 23479
[30] Impact of strain relaxation of AlGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT
Yan Yang
Yue Hao
Jincheng Zhang
Chong Wang
Qian Feng
Science in China Series E: Technological Sciences, 2006, 49 : 393 - 399

← 1 2 3 4 5 →