Growth of high pyroelectric Ba0.65Sr0.35TiO3 films with Ba0.65Sr0.35RuO3 buffer

Ba0.65Sr0.35TiO3(BST) films were grown by RF magnetron sputtering on Pt/Ti/SiO2/Si substrate coated with a 10 nm thick Ba0.65Sr0.35RuO3(BSR) buffer layer. Microstructures of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that the BSR buffer layer significantly affects its microstructures and improves its electric properties. For instance, highly preferred a-axis growth orientation, lower leakage current density and higher dielectric constant can be obtained. The pyroelectric coefficient of BST films grown on BSR buffer reaches 7.45 × 10-7 C&middotcm-2&middotK-1 at 6 V/μm at room temperature.