Europium doping of zincblende GaN by ion implantation

被引：0
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作者：
Lorenz, K. [1 ,2 ]
Roqan, I.S. [3 ]
Franco, N. [1 ,2 ]
O'Donnell, K.P. [3 ]
Darakchieva, V. [1 ,2 ]
Alves, E. [1 ,2 ]
Trager-Cowan, C. [3 ]
Martin, R.W. [3 ]
As, D.J. [4 ]
Panfilova, M. [4 ]
机构：
[1] Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal
[2] CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal
[3] Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom
[4] Department of Physics, University of Paderborn, 33098 Paderborn, Germany
来源：
Journal of Applied Physics | 2009年 / 105卷 / 11期
关键词：
Zinc sulfide - Rutherford backscattering spectroscopy - Gallium nitride - Ion implantation - III-V semiconductors - Molecular beam epitaxy - X ray diffraction;
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摘要：
Journal article (JA)
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