An analytical model for silicon-on-insulator reduced surface field devices with semi-insulating polycrystalline silicon shielding layer

被引：0
|
作者：
Ho, Chi-Hon [1 ]
Liao, Chien-Nan [1 ]
Chien, Feng-Tso [2 ]
Tsai, Yao-Tsung [1 ]
机构：
[1] Department of Electrical Engineering, National Central University, 300 Jhongda Rd., Jhongli 320, Taoyuan, Taiwan
[2] Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung 407, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 7 PART 1期
关键词：
An analytical model is presented to determine the potential and electric field distribution along the semiconductor surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semiinsulating polycrystalline silicon (SIPOS) layer inserted between a silicon layer and a buried oxide. An improvement in the breakdown voltage due to the presence of the SIPOS shielding layer is demonstrated. Numerical simulations using medici are shown to support the analytical model. © 2008 The Japan Society of Applied Physics;
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Journal article (JA)
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页码：5369 / 5373
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