A fully-integrated 60-GHz 8-element phased-array transceiver with embedded antenna T/R switch in 65-nm CMOS

被引：0
|
作者：
Feng, Jing [1 ,4 ]
Duan, Haipeng [1 ,4 ]
Zhang, Tao [3 ,4 ]
Lu, Lin [1 ,4 ]
Luo, Lei [4 ]
Liang, Yue [1 ,4 ]
Chen, Xin [1 ,4 ]
Cheng, Depeng [4 ]
He, Long [4 ]
Wu, Xu [1 ,2 ,4 ]
Fan, Xiangning [1 ]
Li, Lianming [1 ,2 ,4 ]
机构：
[1] School of Information Science and Engineering, Southeast University, Nanjing,210096, China
[2] National Mobile Communications Research Laboratory, Southeast University, Nanjing,210096, China
[3] Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi'an,710071, China
[4] Purple Mountain Laboratories, Nanjing,211111, China
来源：
Microelectronics Journal | 2024年 / 154卷
关键词：
CMOS - Low noise amplifier - Low noiseamplifier - Phase shifter - Phase-shifters - Phased-arrays - Power - Power amplifier - T/R switch - Transmit/receiver (T/R) switch;
D O I：
10.1016/j.mejo.2024.106475
中图分类号：
学科分类号：
摘要：
This paper presents an 8-element phased-array heterodyne transceiver (TRX) chip for 60-GHz wireless applications. The chip integrates transmit/receive (T/R) elements, bi-directional variable-gain driving amplifiers (BI-VGDAs), up/down mixing chains, and the local oscillator (LO) chain. To support the time division duplexing (TDD) operation and increase output power, a low-loss compact on-chip antenna T/R switch is introduced by embedding it in the power amplifier (PA) power combiner, thereby achieving a high transmitter (TX) output power and low receiver (RX) noise figure (NF), respectively. Fabricated in a 65-nm CMOS process, the proposed phased array TRX chip occupies an area of 5.1 mm × 2.5 mm. With measurements, the TX path provides a 32-dB maximum conversion gain, an 11.3-dBm OP1dB, and a 16-dBm Psat, respectively. The RX path achieves a peak gain of 24 dB and an NF of 6.5–9 dB across 57–66 GHz. With the 16-QAM modulation, a 7.04 Gb/s data rate is demonstrated. © 2024 Elsevier Ltd
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