Nanopattern profile control technology using reactive ion etching for 100 GB optical disc mastering

被引：0

作者：

Fujimura, Megumi ^{[1
]}

Hosoda, Yasuo ^{[1
]}

Katsumura, Masahiro ^{[1
]}

Kobayashi, Masaki ^{[1
]}

Kitahara, Hiroaki ^{[1
]}

Hashimoto, Kazunobu ^{[1
]}

Kasono, Osamu ^{[1
]}

Iida, Tetsuya ^{[1
]}

Kuriyama, Kazumi ^{[1
]}

Yokogawa, Fumihiko ^{[1
]}

机构：

[1] Corporate Research and Development Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1600年 / 45卷 / 2 B期

关键词：

We had developed an electron beam recorder (EBR) and studied a process technology for high-density optical disc mastering. In this study; we aimed at controlling a nanopattern profile by adopting inductively coupled plasma reactive ion etching (ICP-RIE) under simple conditions. To control a pattern inclination angle; we introduced an etching power ratio of antenna to bias and investigated the relationship. From the results of our investigation; we confirmed that inclination angle depended on etching power ratio linearly. Furthermore; in the case of a 100GB read-only memory (ROM) equivalent pattern; we formed two kinds of inclined pattern by adopting ICP-RIE. We evaluated line edge roughness (LER) to determine the difference in pit profile accurately. As the result; we confirmed that LER was improved at a steep inclination angle. In addition; we applied ICP-RIE to a 300GB ROM pattern. © 2006 The Japan Society of Applied Physics;

D O I：

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学科分类号：

摘要：

Journal article (JA)

引用

页码：1414 / 1418

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