Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

被引:0
|
作者
Martinez-Pastor, J. [1 ]
Fuster, D. [2 ]
Abellán, M. [2 ]
Anguita, J. [2 ]
Sochinskii, N.V. [2 ]
机构
[1] Instituto de Ciencia de Los Materials, Universidad de Valencia, P.O. Box 22085, 46071 Valencia, Spain
[2] Instituto de Microelectrónica de Madrid, Isaac Newton 8, Tres Cantos, 28760 Madrid, Spain
来源
Journal of Applied Physics | 2008年 / 103卷 / 05期
关键词
14;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] Reactive ion etching of semiconductor materials and of dielectric and metal layers
    Novotny, Zdenek
    Tesla electronics, 1986, 19 (3-4): : 59 - 62
  • [32] Residual-free reactive ion etching of gold layers
    Franz, Gerhard
    Oberhausen, Wolfhard
    Meyer, Ralf
    Amann, Markus-Christian
    AIP ADVANCES, 2018, 8 (07):
  • [33] Implementation of smooth nanocrystalline diamond microstructures by combining reactive ion etching and ion beam etching
    Schmitt, Jana
    Nelissen, Wim
    Wallrabe, Ulrike
    Voelklein, Friedemann
    DIAMOND AND RELATED MATERIALS, 2017, 79 : 164 - 172
  • [34] ACTIVATION OF GERMANIUM ACCEPTORS DURING SICL4 REACTIVE-ION ETCHING OF MOCVD GAAS EPITAXIAL LAYERS
    WEBER, J
    SAWYER, WD
    HARRIS, CI
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 263 - 266
  • [35] Effect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.
    Voznyuk, G. V.
    Levitskii, I. V.
    Mitrofanov, M. I.
    Nikolaev, D. N.
    Evtikhiev, V. P.
    INTERNATIONAL CONFERENCE PHYSICA.SPB/2017, 2018, 1038
  • [36] EPITAXIAL OVERGROWTH ON NANOMETRIC INP WIRES PROCESSED BY REACTIVE ION ETCHING
    IZRAEL, A
    ROBEIN, D
    VAUDRY, C
    MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 395 - 398
  • [37] INP ETCHING BY REACTIVE ION ETCHING METHANE-CHARACTERIZATION OF SURFACE AND EPITAXIAL-GROWTH
    HENRY, L
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (251): : 141 - 141
  • [38] A COMPARISON OF REACTIVE ION-BEAM MILLING AND REACTIVE ION ETCHING FOR MULTILEVEL RESIST PATTERNING
    CASTELLANO, RN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2340 - 2343
  • [39] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL
    GILESTAYLOR, NC
    BICKNELL, RN
    BLANKS, DK
    MYERS, TH
    SCHETZINA, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 76 - 82
  • [40] HGTE AND CDTE EPITAXIAL LAYERS AND HGTE-CDTE SUPERLATTICES GROWN BY LASER MOLECULAR-BEAM EPITAXY
    CHEUNG, JT
    NIIZAWA, G
    MOYLE, J
    ONG, NP
    PAINE, BM
    VREELAND, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2086 - 2090